Samsung announces that it has started mass production of the new 12nm DDR5 DRAM memories: they represent the most advanced evolution in the industry.

The memorie DDR5 they are a type of volatile memory used in computer systems capable of offering significant improvements in terms of speed, capacity and energy efficiency. In another article of ours we have analyzed the main differences between DDR4 and DDR5 highlighting the main changes between one and the other technology.

In addition to the best in terms of data transfer rate Compared to DDR4 memory, DDR5 modules excel in terms of energy efficiency, thanks to a lower operating voltage, optimizing reliability and error correction.

Manufacturers are also striving for improve construction processes with the miniaturization of transistors and integrated circuits inside silicon chips. Samsung announced that it has started mass production of its new ones DRAM DDR5 da 16 gigabit (Gb): use process technology a 12 nanometers (nm) most advanced in the industry.

Compared with the previous generation, Samsung’s new 12nm DDR5 DRAM reduces energy consumption up to 23%, improving wafer productivity by up to 20%. Its awesome energy efficiency configure the new DDR5 from Samsung as an ideal solution for servers and data centers in order to lower energy consumption and carbon footprint.

Samsung’s development of 12nm technology for its RAM DDR5 was made possible through the use of a new high ‘k’ material which helps to increase the capacity of the cells. The elevated capacity results in a significant electrical potential difference in the signals used for data transfer, making it easy to distinguish them accurately.

What does high k material mean

And high “k” material it is characterized by a high relative dielectric constant: it measures the ability of a material to store electrical energy in the electric field.

In the context of transistors and integrated circuits, therefore also in DRAMs, the high “k” material is used as the dielectric layer in the transistor structure to reduce the loss of electrical energy and improve the overall performance.

A higher relative dielectric constant of the high “k” material allows for reduce the applied voltage to achieve the same level of capacitance as a traditional dielectric material.

All this translates into lower energy consumption and greater energy efficiency of the device, greater scalability (it is easier to size the transistors), less interference between transistors. Samsung used the right key for improve performance of RAM, energy efficiency and density.

The South Korean company’s spokesmen said the new milestone with the arrival of the new 12nm DDR5 DRAMs reflects Samsung’s commitment to lead the market with high-performance, high-capacity products.


Please enter your comment!
Please enter your name here