Today when we talk about data storage, we are referring to volatile memorysuch as RAM and VRAM, which allow information to be stored for a short period of time and in any case not without power, and to memories permanent such as those used in SSD drives, SD cards, hard disks, and so on. Non-volatile memories can retain data, albeit with some I distinguishlong-term.
Computing devices, such as PCs and smartphones, integrate both types of memory. However, data transfer operations between volatile and non-volatile memory require time and energy. The hope of many teams of experts is to arrive at the concept of universal memory, which can combine the advantages of both types of memory. Although some similar memories are already on the market, they have the drawback of a high energy consumption.
One of the most important milestones was set in recent years with the presentation of the revolutionary UltraRAM memory. But there is still ample room for maneuver for those with ideas aimed at the world of advanced storage.
The discovery of the compound GST467 to create universal memory
The work carried out by a research group at Stanford University has merited publication in the scientific journal Nature. After years of study, academic experts have in fact identified an innovative material, a compound called GST467 (from the name of its components and the proportions used), which in the future could actually allow the design, creation and subsequent placing on the market of high-performance universal memories.
GST467 uses a “mixture” of germany, antimony e earth in proportion 4:6:7: during laboratory tests, not only did the compound demonstrate excellent properties for non-volatile memory but it also guaranteed data retention. Scientists refer to the possibility of using tensions less than 1V with detected switching times that are less than 40 nanosecondi.
Image source: Stanford University.
Creation of a working prototype
At Stanford they didn’t just stop at the theoretical aspects. The experts have actually built a prototype working memory based on GST467, demonstrating how the new material has the potential to pave the way for a universal memory capable of replacing both short-term and long-term memory, while simultaneously offering greater speed, lower costs and energy efficiency superior.
GST467 is actually a form of phase change memory (PCM) which allows the processing of bits (zeros and ones) switching between high and low resistance states on a glass-like material. When it crystallizes, the material represents bit one; when it loses consistency it represents zero. All while maintaining theenergy absorption contained and constant.
Comparing GST467 with other solutions, the researchers concluded that the material can ensure higher crystallization temperatures and lower melting temperatures than other alternatives.
But that is not all. The researchers report that GST467-based memory designs can theoretically retain data for over 10 yearseven at high temperatures above 120 °C.