In the era of artificial intelligence, we must also look for innovative solutions to make machines work more efficiently: a group of researchers has discovered a material that could revolutionize the use of RAM memory.
The introduction of new technologies and the advancement of existing ones in the sector of computingincluding new high-performance chips and the advent of “mass” artificial intelligence, have exponentially increased the demand for computing power. However, this also leads to an increase in consume not indifferent. For this reason, a group of researchers from the Stanford University set out to find a material that could revolutionize memory components.
The study published in Nature Materials and taken from Phys shows how using a thin layer of the metal alloy “manganese palladium three” (MnPd3) allows to store data in the directions of the spins of the electrons. Such a storage method is called SOT-MRAM (that is to say “spin orbit torque magnetoresistive random access memory”) and allows thedata storage in a much more efficient and faster way than existing solutions, where the data is saved through the electric charge and adiet continues.
At the basis of this solution there is an intrinsic property of the electrons called spin: imagine an electron as a basketball that continues to rotate on the tip of a player’s finger, always remaining in balance. The rotation transforms the electron into a magnet, whose poles change as the electron changes direction of rotation. Taking advantage of this direction, otherwise called “magnetic dipole moment”, you can represent the ones and zeros that make up the data bits.
SOT-MRAM technology was already known before: in 2019 we told how MRAM memories can speed up artificial intelligence applications. SOT-MRAM uses a electric current to generate a spin-orbit force that orients the spin of electrons within a magnetic region of memory. This allows you to write and read data with one speed it’s a stability higher than other non-volatile memory technologies, such as NAND Flash.
In the case of the recently published research, the current flowing in the MnPd3 layer generates specific spin directions so that the movement of the electrons creates a torque capable of changing directions and magnetic dipole moments. The data, therefore, can be stored more densely when the spin directions of the electrons are oriented up or down.
Too bad, however, that conventional materials only generate spin in one direction, and you need a magnetic field external to make the data flow in the right direction, thus requiring more energy and space.
The novelty lies precisely in the use of the MnPd3 material which to date is the only one with the necessary properties for the purpose: so much so that the Stanford researchers have managed to vary the direction of the spins at their discretion.
Fen Xue, a researcher involved in this experiment led by Professor Shan Wang, said: “no new tools or new techniques are needed for this type of material. We don’t need a structured substrate or special conditions to deposit it” Experts are already working on SOT-MRAM prototypes using MnPd3 that will integrate into real devices, designed to come to market in the form of commercial products.
In any case, what stands out on the horizon is destined to become a very promising technology for use in high-speed applications. high memory capacityfrom data centers to mobile devices.